Skip to main content
padlock icon - secure page this page is secure

Design and Optimization of a mm-Wave Ring Oscillator Using Carbon Nanotube Field Effect Transistor for Medical Imaging System

Buy Article:

$106.51 + tax (Refund Policy)

A great deal of research has recently focused on the millimeter wave (mm-wave) systems such as the 94 GHz for high resolution images in the medical field. The transceiver integrated circuits of the mm-wave systems require an accurate and reliable oscillator that takes into account the challenge of a high tuning range frequency, low noise and low power consumption. Thus, this paper presented a new optimization methodology applied to design a wide tuning mm-wave voltage controlled ring oscillator (VCRO) using a Carbon Nanotube Field Effect Transistor (CNFET) technology. In order to obtain speed, power and tuning performances, we analyzed the impact of the CNFET parameters variation like the CNT diameter, number of nanotubes (CNT) and the inter-CNTs pitch, on drain-source current IDS and the equivalent CNFET capacitance. A CNFET varactor was used in the scheming of the mm-wave VCRO to tune the frequency oscillation. The CNTFET mm-wave ring oscillator was designed and its performances in terms of power, speed and tuning have been investigated via optimizing the CNFET parameters. The mm-wave VCRO was implemented under Agilent Design System (ADS) using the CNFET process. Simulation results show that the optimized mm-wave CNFET_VCRO has the lowest power consumption equal to 76 μW. It also enjoys the fastest response time (60 ps), a centered frequency at 94 GHz, a tuning range of 30 GHz (31.9%).
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: CNFET; MM-WAVE IMAGER SYSTEMS; OPTIMIZATION METHODOLOGY; TUNING RANGE FREQUENCY; VOLTAGE CONTROLLED RING OSCILLATOR

Document Type: Research Article

Publication date: August 1, 2017

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more