Fabrication of ZnO Nanorods Based p–n Heterojunction Diodes and Their Electrical Behavior with Temperature
Herein, we report the growth, characterizations and heterojunction diode application of aligned n-ZnO nanorods on p-silicon substrate. The nanorods were grown by low temperature aqueous solution process and characterized in terms of their morphological, structural, optical and electrical properties. The detailed characterization studies revealed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase, grown along the  direction. Presence of sharp and strong UV emission and suppressed green emission in the PL spectrum of as-grown ZnO nanorods confirmed good optical properties. The electrical properties of the as-grown nanorods were examined by fabricating p–n heterojunction diode. The fabricated heterojunction diode exhibited good rectifying behavior of rectification factor of ∼4 at voltage of 7.5 volts. Low values of quality factor of 1.2 and 1.07 obtained at temperatures of 30 °C and 100 °C emphasized the good stability of the fabricated device over temperature change The values of effective barrier height of 0.73 and 0.9 volts are determined at temperatures 30 °C and 100 °C, respectively.
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Document Type: Research Article
Publication date: July 1, 2017
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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