Skip to main content
padlock icon - secure page this page is secure

Implementation of PMN-PT/Ni Based NOR Gate with Biaxial Anisotropy Off Ultra Low Energy Dissipation

Buy Article:

$106.51 + tax (Refund Policy)

The authors theoretically analyzed the possibility of straintronics based ultra low power 4-state NOR gate by using three number of piezoelectric magnetostrictive multiferroics nanomagnets (PMN-PT/Ni) placed in a linear array. Each nanomagnet's magnetization orientation can produce 4-state condition. The peripheral magnets are encoded with input bits, and the central magnet's magnetization orientation is encoded with output bits. Numerical simulation result confirms that an alternating voltage pulse of ±16 mV applied at the piezoelectric layer of the Input magnets for switching or desired combination of the Input bits, drives the output into the global ground state which is the NOR function of the input bits. Here single crystal PMN-Pt is taken as piezoelectric material which is more sensitive and Gate operation is executed with ultra low energy dissipation of ≅215 kT which is 150 times less than the PZT based Gates.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: BIAXIAL MAGNETO-CRYSTALLINE ANISOTROPY; ENERGY DISSIPATION; LEAD MAGNESIUM NIOBATE-LEAD TITANATE (PMN-PT); LEAD ZIRCONATE TITANATE (PZT); MAGNETIZATION DIRECTION; MULTIFERROICS; NANOMAGNETIC LOGIC (NML); NOR GATE; STRAINTRONICS; STRESS CYCLE

Document Type: Research Article

Publication date: July 1, 2017

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more