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The Effect of (K0.5Bi0.5) Doping on Structural and Dielectric Properties of SrBi2 Nb2O9 Ceramics

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In this work, Sr1– x (K0.5Bi0.5) x Bi2Nb2O9 solid solution powders were synthesized using a sucrose-assisted sol–gel combustion technique with x = 0, 0.3, 0.5, 0.7, and 1.0. Structural investigations of the compounds were conducted using X-ray diffraction (XRD) and transmission electron microscopy (TEM). AC dielectric measurements at a temperature range of 300–830 K were performed to investigate the effect and influence of (K0.5Bi0.5) substitution on dielectric properties. XRD results revealed that the increase of doping by (K0.5Bi0.5) caused a decrease in all lattice parameters, cell volume, and orthorhombic distortion, and an increase in orthorhombicity and crystallite size, which were discussed in view of the difference in ionic radii. TEM images showed agglomerated crystals with increasing (K0.5Bi0.5) dopant. The dielectric measurements revealed that the Curie temperature increased when Sr content decreased, which can be attributed to tolerance factors and structure distortion. On the other hand, dielectric loss was found to be reduced significantly, which can be attributed to the increase of complexity in form of distortion in the crystal structure. In addition, the dielectric loss plots of the samples revealed stable behavior through the temperature range between 300 and 650 K, which make these ceramics suitable for high-temperature applications.
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Document Type: Research Article

Publication date: July 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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