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Highly Ordered GeSi Quantum Dots Fabrication on Patterned Si Substrates with Gas Source Molecular Beam Epitaxy

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GeSi nanostructures were grown on patterned Si substrate by the gas source molecular beam epitaxy (GSMBE) technology in this paper. The technique of near ultraviolet laser interference lithography (NUV-LIL) and graphic inversion were adopted in the fabrication process of nano-scale patterned Si substrate before GeSi growth. Highly ordered GeSi quantum dot (QD) arrays with uniform size were successfully achieved.
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Document Type: Research Article

Publication date: July 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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