Highly Ordered GeSi Quantum Dots Fabrication on Patterned Si Substrates with Gas Source Molecular Beam Epitaxy
GeSi nanostructures were grown on patterned Si substrate by the gas source molecular beam epitaxy (GSMBE) technology in this paper. The technique of near ultraviolet laser interference lithography (NUV-LIL) and graphic inversion were adopted in the fabrication process of nano-scale patterned Si substrate before GeSi growth. Highly ordered GeSi quantum dot (QD) arrays with uniform size were successfully achieved.
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Document Type: Research Article
Publication date: July 1, 2017
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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