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Understanding the Spin Transport in MgO–HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction

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In this paper we present the first principles comparative computations of spin dependent transport in magnetic tunnel junction (MTJ) that consists of MgO–HfO2 bilayer barrier sandwiched in between a pair of CrO2 electrodes. Two different barrier orientations, series and parallel were tried. In both the structures, perfect spin filtration and large tunnel magnetoresistance (TMR) was observed when half-metallic-ferromagnetic (HMF) CrO2 electrodes are used. For both the structures, parallel configuration's (PC) spin current is found orders of magnitude greater than antiparallel configuration's (APC) spin current in the bias voltage ranging from 0 V to 1.2 V. TMR remains high ∼100% at both low and high bias voltages in structure with series barrier, however, TMR decreases from 100% to 84.31% in structure with parallel barrier as bias voltage is increased from 0 V to 1.2 V. Furthermore, ∼100% spin filtration is obtained at all bias voltages. Perfect spin filtration and Large TMR suggests usefulness of these structures in spintronics based devices. The non-equilibrium spin dependent transport is also examined by investigating the bias dependent transmission coefficients.
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Keywords: ANTI-PARALLEL CONFIGURATION (APC); HALF-METALLIC-FERROMAGNETIC (HMF) ELECTRODES; MAGNETIC TUNNEL JUNCTION (MTJ); PARALLEL CONFIGURATION (PC); SPIN EFFICIENCY (η); TUNNEL MAGNETORESISTANCE (TMR)

Document Type: Research Article

Publication date: July 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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