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Nanostructured Anodic Al2O3/TiO2/Al2O3 Metal–Insulator–Metal Capacitors

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This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal–insulator–metal (MIM) capacitor using anodization technique. High capacitance density of > 6 fF/μm2, low quadratic voltage co-efficient of capacitance of <103 ppm/V2 and a low leakage current density of 4.3 × 10–11 A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. The structural and electrical properties are discussed in detail. This work suggests that the anodization method can offer multilayer crystalline dielectric stack required for high performance MIM capacitor.
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Keywords: ANODIZATION; HIGH-K; METAL–INSULATOR–METAL (MIM) CAPACITOR

Document Type: Research Article

Publication date: July 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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