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Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron-Spin Polarization in a Magnetic-Barrier Nanostructure

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We theoretically investigate the electron-spin transport properties in anti-parallel double δ-magnetic-barrier nanostructure modulated by the spin-orbit coupling (SOC), which can be fabricated experimentally by depositing two ferromagnetic stripes with the horizontal magnetization on top and bottom of a semiconductor InAs/Al x In1–x As heterostructure. Both Rashba and Dresselhaus SOCs are taken into account, and transmission coefficient, conductance and spin polarization are analytically calculated by means of the improved transfer matrix method (IMMM). The electron-spin transport through this nanosystem is found to be dependent strongly on the SOC. The electron-spin polarization also is found to be manipulated by properly adjusting the strength of the SOC, which may give rise to a tunable spin filter for spintronics applications.
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Document Type: Research Article

Publication date: July 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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