Skip to main content
padlock icon - secure page this page is secure

Effect of Annealing Treatment on the Properties of Stoichiometric Indium Zinc Tin Oxide (IZTO) Thin Films

Buy Article:

$105.00 + tax (Refund Policy)

Indium zinc tin oxide (IZTO) thin films were deposited onto glass substrate by RF magnetron sputtering method. IZTO ceramic targets with four different chemical compositions corresponding to In1 –2 x Zn x Sn x O1.5 (x = 0.20–0.35), i.e., IZTO20, IZTO25, IZTO30, and IZTO35, were employed as the sputtering sources. The deposition was carried out in pure argon atmosphere at 400 °C. As-deposited IZTO films were then annealed at varying temperatures for 30 minutes under argon or reducing gas (Ar + H2) atmosphere in order to further reduce the resistivity value of the films. The structural, optical, and electrical properties of the films were examined by X-Ray diffraction (XRD), UV-Vis spectrometry, and Hall effect measurement. The resistivity of IZTO films with decreasing indium content down to 40 at.%, i.e., IZTO30 film was successfully reduced to 5 × 10–4 Ω · cm after annealing treatment at 450 °C. Even lower resistivity value of 3 × 10–4 Ω · cm was obtained from one of the non-stoichiometric compositions in IZTO system. The work function value increased accordingly with the reduction of indium content as the film became more amorphous than the films with higher indium content, indicating the fact that IZTO films with low indium content might be suitable for organic photovoltaic applications.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: INDIUM ZINC TIN OXIDE (IZTO); RAPID THERMAL ANNEALING; RF MAGNETRON SPUTTERING; TRANSPARENT CONDUCTING OXIDE (TCO)

Document Type: Research Article

Publication date: 01 June 2017

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more