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The Temperature Dependences of the Electron-Deformation Potential Phonon Interacting System of Quasi Two Dimensional System Under Circularly Oscillating Fields in GaAs and Ge

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We study the optical quantum transition line shapes (QTRSs) and optical quantum transition line widths (QTLWs) in relation to the magnetic-field dependence properties of an electron-deformation potential phonon interaction system. We consider two systems: one subjected to right circularly oscillating external fields and the other subjected to left circularly oscillatory external fields. The main purpose of this work is to compare the QTLSs, which indicate the absorption power, in two oscillating external fields. Our results indicate that the QTLSs of the right circularly oscillating external fields are larger than the QTLSs of the left circularly oscillating external fields, while the opposite result is obtained for the QTLWs. We theoretically investigated the temperature dependence of the quantum optical transition of quasi 2-Dimensional Landau splitting system in GaAs and Ge.
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Keywords: ELECTRON PHONON COUPLING SYSTEM; EQUILIBRIUM AVERAGE PROJECTION SCHEME (EAPS); GAAS AND GE; QUANTUM TRANSITION LINE SHAPES (QTLS); QUANTUM TRANSITION LINE WIDTHS (QTLW); QUANTUM TRANSPORT THEORY; RESPONSE FORMULA; SCATTERING FACTOR FORMULA

Document Type: Research Article

Publication date: April 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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