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Holistic Analysis and Systematic Design of High Confinement Factor, Single Mode, Nanophotonic Silicon-on-Insulator Rib Waveguides

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For efficient operation of nanoscale optoelectronic components, realization of nanophotonic waveguides confining high mode powers is imperative. In most cases, this requirement is further compounded by the requirement of fabricating nanostructures supporting the fundamental mode only. We carried out an extensive numerical analysis based on rigorous full-vectorial finite difference method with perfectly matched layer boundaries to identify the single mode operation region of sub-micrometer silicon-on-insulator rib waveguides in terms of the waveguide geometric parameters. We particularly emphasized on achieving high mode confinements while designing a single mode waveguide and provided a way to engineer the confinement factor. Contrary to what has been established in the case of large cross-section rib waveguides, we demonstrated that determination of theoretical single mode conditions is possible for sub-micrometer waveguides with accuracy approaching 100%. To the best of our knowledge, this is the first such analysis which covers both, the deeply and the shallowly etched rib waveguides (0.1≤ (slab height/rib height) ≤ 0.8) and reports the single mode condition for entire sub-micrometer range (0.2 μm ≤ rib height, rib width ≤ 1.0 μm) while adhering to design specific mode confinement requirements.
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Document Type: Research Article

Publication date: April 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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