Skip to main content
padlock icon - secure page this page is secure

Investigation of Analog/Radiofrequency Figures-of-Merits of Charge Plasma Schottky Barrier Tunnel Field Effect Transistor

Buy Article:

$106.51 + tax (Refund Policy)

In this paper, we investigate the analog and RF figures-of-merits for double pocket charge plasma Schottky barrier tunnel FET (CP-SB-TFET). The structure is realized by using the work-function engineering of gate electrodes for inducing charge plasmas in the highly doped n + pocket regions without actual metallurgical doping. This approach obviates the need of separate implantation, photo masking and higher thermal budget for annealing. Hence, it is highly immune towards process variations, doping control issues, mobility degradation and random dopant fluctuations (RDFs), while enhancing the device performance of conventional double pocket SB-TFETs. The detailed comparison is carried out between conventional doped double pocket SB-TFETs and double pocket CP-SB-TFET by comparing various performance metrics. The key idea behind this investigation is to provide a physical explanation for the impact of induced pockets on analog and RF performances of the device. The major figures of merit (FOMs) such as, transconductance (g m), output conductance (g d), transconductance generation factor (TGF), cut off frequency (f T), gain bandwidth product (GWB), transconductance frequency product (TFP), gain frequency product (GFP) and various device parasitic capacitances (C gs, C gd, C gg) are analyzed in this paper with the help of extensive 2-D TCAD device simulation. The analysis reveals potentials of CP-SB-TFET for realizing high performance at scaled dimensions, fast switching analog and RF circuit applications with simplified fabrication process.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: CHARGE PLASMA; CUT OFF FREQUENCY (FT); GAIN BANDWIDTH PRODUCT (GWB); GAIN FREQUENCY PRODUCT (GFP); OUTPUT CONDUCTANCE (GD); RANDOM DOPANT FLUCTUATIONS (RDF); SCHOTTKY BARRIER TUNNEL FET (SB-TFET); TRANSCONDUCTANCE (GM); TRANSCONDUCTANCE FREQUENCY PRODUCT (TFP); TRANSCONDUCTANCE GENERATION FACTOR (TGF); WORK-FUNCTION ENGINEERING

Document Type: Research Article

Publication date: April 1, 2017

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more