Sol–Gel Derived Cu(In,Ga)Se2 Thin Film Solar Cell
Well crystallized copper indium gallium (di)selenide-Cu(In,Ga)Se2 (CIGS) thin films were deposited on conducting substrates (molybdenum coated soda-lime glass) by sol–gel dip coating technique. The n-type cadmium sulfide (CdS) buffer layer was produced by chemical bath deposition (CBD) technique and the n-type ZnO:Al thin film has been used as transparent conductive layer was deposited by sol–gel dip coating technique. The selenium powder was dissolved in trioctylphosphine (TOP, 90%, technical grade) solution during the experiment process to make some progress on scientific innovation of CIGS thin films derived by sol–gel dip coating technique. Hence, the heterojunction at Mo/CIGS/CdS/ZnO:Al/Al configuration was produced on a soda-lime silicate glass substrate (SLSG). SLSG/Mo/CIGS/CdS/ZnO:Al/Al heterojunction was fabricated by using a practical economical and more eco-friendly technique. The structural, optical and current–voltage (I–V) characteristics of the CIGS based heterojunction was analysed by using the SLSG/Mo/CIGS/CdS/ZnO:Al/Al device configuration. The optoelectronic properties such as the open-circuit voltage (V oc), the short-circuit current (I sc), the fill factor (FF), the ideality factor (n) etc. of the CIGS thin film solar cells were examined depending on the annealing temperature at 500 °C for 45 minutes in air. The CIGS thin film heterojunctions which has been obtained present diode like rectifying behaviour besides photovoltaic behaviour under UV illumination.
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Document Type: Research Article
Publication date: April 1, 2017
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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