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Estimation of Analog/Radio-Frequency Figures-of-Merits and Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET

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In this paper, we investigate the analog/RF figures-of-merits and circuit performance of dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET). The proposed device exhibits ultra steep sub-threshold slope (SS), symmetric device structure and on-the fly polarity selectivity as it synergistically leverages both weak impact-ionization induced positive feedback and on-the fly electrostatic modulation of Schottky barrier height. E-SiNW-SB-FET is extensively analyzed for its both p- and n-configurations using calibrated 3-D TCAD device simulations, in terms of various device analog/RF performance figures-ofmerit (FOMs) such as, zero temperature coefficient (ZTC), transconductance (g m), transconductance generation factor (TGF), total gate capacitance (C gg), output conductance (g out), and cut off frequency (f T), etc. The key idea behind this investigation is to provide a physical explanation for the impact of electrostatically doped device on their analog/RF performances. Further, to evaluate the potential applications of E-SiNW-SB-FET for low power digital circuit design of the proposed device its circuit mode simulations are also carried out using mixed mode simulations. The transient characteristic of E-SiNW-SB-FET based inverter is also explored in-detail. This reported approach of E-SiNW-SB-FET realization simplifies fabrication process as ion implantation and high thermal budget are no longer required. This facilitates immunity towards process variations, mobility degradation at higher doping and random dopant fluctuations (RDFs). Hence, the proposed E-SiNW-SB-FET is the potential candidate for next generation high speed low power dually active analog devices on a single chip.
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Keywords: CUT OFF FREQUENCY (FT); RANDOM DOPANT FLUCTUATIONS (RDF); SCHOTTKY BARRIER FET (SB-FET); TRANSCONDUCTANCE (GM); TRANSCONDUCTANCE GENERATION FACTOR (TGF); ZERO TEMPERATURE COEFFICIENT (ZTC)

Document Type: Research Article

Publication date: April 1, 2017

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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