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A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes

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We have produced Au/n-Si (MS), Au/n-Si/biphenyl-CuPc (MPS1), and Au/n-Si/biphenylSubs-CoPc (MPS2) type Schottky barrier diodes (SBDs) to investigate the effect of interfacial layer on the main electrical parameters. Biphenyl-CuPc and biphenylSubs-CoPc interfacial layers were successfully coated on n-Si substrate by using the spin coating system. The current–voltage (IV) characteristics of these structures were investigated at room temperature and they were considerably influenced by the interfacial layer. The main electronic parameters of these three type diodes that are reverse saturation current (I 0), series resistance (Rs ), ideality factor (n), and zero-bias barrier height (φ B 0) were determined from the forward bias IV characteristic. The energy density distribution profile of the interface states (Nss ) was also obtained from the forward IV data by taking into account voltage dependent effective barrier height (φ e ) and ideality factor n(V), and increased from the bottom of conductance band to the mid-gap energy of Si almost exponentially. In addition, the voltage dependent profile of resistance was obtained from capacitance–voltage (CV) and conductance–voltage (G/ ωV) data at high frequency (500 kHz) at room temperature for each diode. Experimental results show that the Rs , Nss and the interfacial layer are significantly effective on the electrical characteristics.
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Document Type: Research Article

Publication date: October 1, 2016

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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