Low-Temperature Growth of Nanocrystalline CuO Thin Films on Si by Aqueous Method
Nanocrystalline copper oxide (CuO) thin films were grown on Si substrates by using thermal oxidation of the Cu as seeding layer in the aqueous solution method. The film was characterized for the structural, morphological, optical and electrical properties by means of X-ray diffraction (XRD) scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL) methods. The results indicate that the singlephase CuO film was obtained and it has a uniform surface. It was composed by dense faceted and angled grain. And the room temperature PL measurement of the CuO film showed a broad emission band centered at 425 nm. In addition, a simple CuO/Si diode has been fabricated. Electronic properties (current–voltage) of the structures exhibited rectifying results. The method will provide a simple pathway of synthesizing CuO nanostructure film at low temperature.
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Document Type: Research Article
Publication date: October 1, 2016
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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