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Effect of Annealing on Surface Morphology and Bandgap Shift of Sol–Gel-Derived Mg-Doped ZnO Thin Films Grown on Mica Substrates

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We studied the effect of annealing temperature on the surface morphology and bandgap energy of Mg-doped ZnO (MZO) thin films grown on muscovite mica substrates using sol–gel spin-coating. Both the un-annealed and the MZO thin film annealed at 300 °C exhibited cracked and flat surfaces consisting of very small particles, while a uniform and dense morphology consisting of spherical nanoscale grains was observed in the films annealed at temperatures above 400 °C. All the films exhibited strong ultraviolet emissions in the range of 3.2–3.4 eV and broad defect-related emissions in the visible region. An average transmittance of over 80% in the visible region was observed for all the films. The absorption edges in the transmittance and absorption coefficient spectra were found to be shifted toward lower wavelengths with an increase in the annealing temperature. The optical bandgap and Urbach energy of the films were calculated from the absorption coefficients.

Keywords: MG DOPING; MICA; OPTICAL PROPERTIES; SOL–GEL; ZINC OXIDE

Document Type: Research Article

Publication date: 01 June 2016

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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