RF-Magnetron Sputtering of Si₃N₄ and Study of Si₃N₄/p-Si Heterostructures

Here we report the feasibility of using cheap and environmentally friendly RF-magnetron sputtering of Si₃N₄ and formation of Si₃N₄ nanostructured films with developed surface. p-Si(100) polished plates commonly used in photovoltaic structures were chosen as a substrate. Si₃N₄ film surface morphology was studied using atomic force microscopy. It has been established that the specific surface area of the silicon nitride increases more than 10 times by increasing substrate temperature from T _s = 40 °C to T _s = 800 °C. At the same time, growth of substrate temperature changed the average size of nano-patterns. Cross section of the heterostructure Si₃N₄/p-Si(100) was investigated by high resolution transmission electron microscopy. Based on electron diffraction studies, it was found that the obtained silicon nitride film is a mixture of cubic and amorphous phases Si₃N₄. The Si₃N₄/p-Si(100) heterostructure is found to be similar to previously studied SiC/p-Si(100).