Properties of Silicon Quantum Dots Embedded in Silicon Nitride Deposited by Magnetron Co-Sputtering
Si-rich silicon nitride (SRSN) films were deposited on Si(100) and quartz substrates by bipolar pulse and RF magnetron co-sputtering at 400 C, followed by a rapid photo-thermal annealing at 1050 °C in a nitrogen atmosphere. Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy,
grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy were employed to characterize the films. The FTIR spectra demonstrate that the SRSN films were successfully prepared. The Raman spectra GIXRD spectra and TEM show that
when the bipolar pulse power was 80 W or higher, nano-crystalline Si quantum dots (QDs) were formed in the samples. The crystal volume fraction of the Si QDs increases with the increment of the sputtering power, and the average size of the Si QDs decreases simultaneously. At last, all the
films exhibit three fluorescence peaks involving the ≡Si0, ≡Si –, and =N– defect states in PL spectra.
Keywords: MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SI QUANTUM DOTS; SILICON NITRIDE
Document Type: Research Article
Publication date: 01 August 2014
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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