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Resonance Enhancement of Raman Scattering from One-Dimensional Periodical Structures of Porous Silicon

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Using the method of oscillating dipoles we calculate intensities of the Stokes components of the Raman scattering from one-dimensional photonic crystals made of porous silicon as a function of the excitation wavelength in the range of 0.8–1.1 μm. The performed calculations enable us to explain a strong increase of the Raman scattering intensity, which is experimentally observed in multilayered periodic structures of porous silicon with period of ∼100–200 nm under excitation with the wavelength correspondent to the edge of the photonic band gap. This effect is attributed to the resonant penetration of the excitation light into the sample in contrast to possible resonant out-coupling of the Raman scattered light from the sample. The resonant penetration results in an enhancement of the light-matter interaction and then the Raman scattering signal of the multilayered structure of porous silicon is increased by ∼10 times in comparison with that for homogeneous porous silicon layer.
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Document Type: Research Article

Publication date: November 1, 2012

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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