Fabrication of Nanoscale Electrical Circuits on Diamond-Like Carbon Film by Scanning a Ga+ Focused Ion Beam
In this study, we attempted to control the electrical conductivity of diamond-like carbon (DLC) films by Ga + focused ion beam (FIB) implantation. We performed Ga + ion implantation in DLC films by scanning a FIB. The Raman scattering spectra of Ga + ion implanted DLC films and non-implanted DLC films showed typical DLC characteristics by Raman spectroscopic analysis. We examined the relationship between electrical resistivity and Ga + dose by the two probe method. The electrical resistivity of DLC films decreased with an increase in the Ga + ion dose. Also, the current passing through a nanosized area of the DLC films implanted with Ga + ions increased with increasing voltage. These results showed that FIB implantation was capable of controlling the electrical conductivity of DLC, and that nanoscale electrical circuits can be written on DLC films by FIB implantation.
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Document Type: Research Article
Publication date: June 1, 2012
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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