Controlled Luminescence Property of AlN Nanowires
The luminescence phenomenon and defect related photon excitation luminescence of growth temperature controlled single-crystalline wurtzite AlN nanowires were investigated in this study. The AlN nanowires were grown at various growth temperatures from 1200 C to 1500 C on sapphire (0002) substrates by catalytic assisted chemical vapor deposition. The morphology of the nanowires was characterized by scanning electron microscopy, and the single crystalline microstructure was confirmed by the selected area diffraction pattern and X-ray spectroscopy. The luminescence properties of AlN nanowires were studied by electron and photon excitation measurements, such as cathode luminescence and photoluminescence. In addition to two typical defect bands related transmissions around 3.0 eV and 4.85 eV, band edge emission around 6.2 eV was also observed at room temperature. A blue shift with increasing growth temperature was suggested due to the radioactive recombination processes involving oxygen impurity and Al vacancies. Growth temperature dependent surface effect and defect related optical properties were also discussed.
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Document Type: Research Article
Publication date: June 1, 2012
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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