Skip to main content
padlock icon - secure page this page is secure

Formation of GaAs Double Rings Through Gallium Migration and Nanodrilling

Buy Article:

$106.51 + tax (Refund Policy)

Fabrication of GaAs/AlGaAs nano-ring structures by the droplet epitaxy technique is presented. Various double-ring shaped nanostructures are obtained by the crystallization of Ga droplets with a varying As supply and are characterized by the Atomic Force Microscopy. The formation mechanism of the nano-rings under the influence of the As flux has been deduced from the nano-ring morphology, revealing that the evolution of double nano-rings is caused by a combination of Ga migration and a nanodrilling effect.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: March 1, 2011

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more