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Formation of GaAs Double Rings Through Gallium Migration and Nanodrilling

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Fabrication of GaAs/AlGaAs nano-ring structures by the droplet epitaxy technique is presented. Various double-ring shaped nanostructures are obtained by the crystallization of Ga droplets with a varying As supply and are characterized by the Atomic Force Microscopy. The formation mechanism of the nano-rings under the influence of the As flux has been deduced from the nano-ring morphology, revealing that the evolution of double nano-rings is caused by a combination of Ga migration and a nanodrilling effect.
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Keywords: ATOMIC FORCE MICROSCOPE; DROPLET; EPITAXY; QUANTUM RING

Document Type: Research Article

Publication date: March 1, 2011

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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