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Silicon Nanowire Transistors for Implementing an Field Programmable Gate Array Architecture with Scan Chain

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This study presents a Field Programmable Gate Array (FPGA) architecture that uses vertical, undoped silicon nanowire transistors with metal gates and utilizes scan chain approach to minimize wiring channels. The study starts with a brief description of the nanowire transistor, its SPICE model with RC parasitics, and continues with an in-depth analysis of circuit performance and power dissipation of CMOS nano-circuits used in this particular FPGA architecture. The device design cycle optimizes both the NMOS and PMOS nanowire transistors for minimal dynamic power dissipation. Each transistor is modeled using BSIMSOI; parasitic resistance and capacitance values are extracted for SPICE simulations. FPGA is composed of cluster blocks, each of which contains three 4-input Look-Up-Tables (4-LUT). Each 4-LUT can be programmed to implement either combinatorial logic or state machine. Scan chains are used to program a specific logic function for each 4-LUT, to define data-paths in a cluster and between clusters and to reduce wiring channels. Inter-cluster communication is established by an 8-bit wide data bus and 4 shared switch boxes placed at each corner of a cluster. Worst-case propagation delay for a 4-LUT is 20.8 ps from its clock input to its output; the worst-case inter-cluster wire delay is 4.8 ps between 2 diagonally adjacent clusters and 11.2 ps between 2 diagonal clusters placed at 4 cluster lengths away. Worst-case dynamic power dissipation of a 4-LUT is 2.8 W if there is no overlap between selector inputs to a 4-LUT and increases by 60 nW/ns of overlap at 10 GHz. FPGA layout contains silicon nanowire transistors placed in a fabric matrix where each NMOS (PMOS) transistor has 4 neighboring PMOS (NMOS) transistors and occupies approximately 0.16 cm2.

Keywords: FPGA ARCHITECTURE; LOW POWER; MOS TRANSISTOR; NANOWIRE; SILICON NANOWIRE

Document Type: Research Article

Publication date: 01 December 2009

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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