Modeling of the Inversion Charge Density in the Nanoscale Symmetric Double Gate MOSFET: An Analytical Approach
In this paper we have considered a nanoscale symmetric double gate (SDG) MOSFET for the analytical modeling of the inversion charge density by solving Poisson's equation in a two-dimensional boundary value potential approach. The inversion charge density estimation gives the idea for the evaluation of the threshold voltage, drain current and other important parameters of the device. In this paper the variation of the inversion charge density with the distance along the channel at different applied drain to source and gate to source voltages is presented. For the first time the variation of inversion charge density with the distance along the channel for various region of operation is presented in this paper. The result obtained have been compared and contrasted with the reported results for the purpose of the validation.
Keywords: INVERSION CHARGE DENSITY; MID GAP SDG MOSFET; NANOSCALE SYMMETRICAL DOUBLE GATE MOSFET
Document Type: Research Article
Publication date: 01 December 2007
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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