Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth
Controllable synthesis of the nanostructures of group III nitrides is an important topic for potential applications in semiconductor nanotechnology due to their promising optical and electrical properties. In this article, different quasi-aligned one-dimensional AlN nanostructures, including columnar flowers, nanocolumns, and nanocones, have been selectively synthesized via catalyst-assisted vapor-solid epitaxial growth on Co-deposited quartz plate through the reaction between AlCl3 vapor and NH3. The as-prepared hexagonal AlN products grow preferentially along the c-axis, the extent of which depends on the synthetic conditions. The growth mechanism is discussed based on the correlation among the reaction temperature, AlCl3 vapor pressure, and the morphologies of the products.
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Document Type: Research Article
Publication date: April 1, 2006
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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