Skip to main content
padlock icon - secure page this page is secure

Can a Non-Ideal Metal Ferromagnet Inject Spin Into a Semiconductor With 100% Efficiency Without a Tunnel Barrier?

Buy Article:

$106.34 + tax (Refund Policy)

Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization or there exists a suitable tunnel barrier at the interface. In this article, we show that, at absolute zero temperature, 100% spin injection efficiency from a nonideal metal ferromagnet into a semiconductor quantum wire can be reached at certain injection energies without a tunnel barrier, provided there is an axial magnetic field along the direction of current flow as well as a spin orbit interaction in the semiconductor. At these injection energies, spin is injected only from the majority spin band of the ferromagnetic contact, resulting in 100% spin injection efficiency. This happens because of the presence of antiresonances in the transmission coefficient of the minority spins when their incident energies coincide with Zeeman energy states in the quantum wire. At absolute zero and below a critical value of the axial magnetic field, there are two distinct Zeeman energy states and therefore two injection energies at which ideal spin filtering is possible; above the critical magnetic field, there is only one such injection energy. The spin injection efficiency rapidly decreases as the temperature increases. The rate of decrease is slower when the magnetic field is above the critical value. The appropriate choice of semiconductor materials and structures necessary to maintain a large spin injection efficiency at elevated temperatures is discussed.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Document Type: Research Article

Publication date: April 1, 2006

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more