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Home / Journal of Nanoscience and Nanotechnology, Volume 20, Number 8

The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green’s Function Method

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Author: Hur, Ji-Hyun

Source: Journal of Nanoscience and Nanotechnology, Volume 20, Number 8, August 2020, pp. 4832-4838(7)

Publisher: American Scientific Publishers

DOI: https://doi.org/10.1166/jnn.2020.17797

We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green’s function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.

Keywords: Field Effect Transistor; Graphene Nanoribbon; Non-Equilibrium Green’s Function; Quantum Transport

Document Type: Research Article

Affiliations: Department of Electrical Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea; Hur Advanced Research, 96, Dongtanbanseok-ro, Hwaseong-si, Gyeonggi-do, 18456, Republic of Korea

Publication date: 01 August 2020

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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