Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor
In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence
is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel
tunneling occurs.
Keywords: Band to Band Tunneling (BTBT); Flicker Noise; Poole–Frenkel Tunneling (PF Tunneling); Trap-Assisted Tunneling (TAT); Tunneling Field Effect Transistor (TFET)
Document Type: Research Article
Affiliations: Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea
Publication date: 01 August 2020
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