Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors

We investigate the DC, C–V, and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From I–V and C–V curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage (V _th) due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive V _th (normally-off operation) due to the absent of 2DEG channel on the triangle shaped GaN nanowire. However, both devices show the similar temperaturedependent I–V characteristics due to the combination of bulk channel and surface channel in GaN nanowire GAA channel are mostly contributed, rather than the 2DEG channel. GaN-based nanowire GAA transistors demonstrate to almost negligible current collapse phenomenon due to the perfect GAA gate structure in GaN nanowire. The proposed GaN-based nanowire GAA transistors are very promising candidate for both high power device and nano-electronics application.