A simple and convenient method for the formation of Pt nanoparticulate films as a sensing material by controlling deposition rates is demonstrated to realize AlGaN/GaN high electron mobility transistor-based high-sensitivity hydrogen gas sensors. The Pt nanoparticulate films produced
at a low deposition rate (Sample 1: 0.3 Å/s) exhibit a smooth surface and uniformly sized Pt grains, while the films produced at a high deposition rate (Sample 2: 1.5 Å/s) consist of bigger Pt grains and more coalesced grains on the surface. The deposition rate has a distinct effect
on the surface morphology. The maximum current change percentage for sample 1 is 2.1×103% at a V
GS of −4.3 V while that for sample 2 is 4.4×103% at a V
GS of −4.5 V. Sample 2 has a two times larger current response
to hydrogen gas than sample 1, which results from a large increase in channel conduction induced by a huge catalytic surface area of Pt nanoparticulate films. This technique offers an alternative method for the facile deposition of a sensing material and is potentially useful in various applications,
such as gas, chemical, and biological sensors.
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Hydrogen Gas Sensor;
Document Type: Research Article
Nanodevices Laboratory, Korea Advanced Nano Fab Center (KANC), Suwon 16229, Republic of Korea
Department of Electrical Engineering, Incheon National University, Incheon 406772, Republic of Korea
Publication date: April 1, 2020
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Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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