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Ultraviolet Photoconductive Detector Based on MgO/a-GaN Heterostructure Grown by Aqueous Method

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Thin MgO nanostructure layer was grown on a-plane GaN film in this study using low temperature aqueous method. The thin MgO layer showed uniform sheet-like morphology. Meanwhile, ultraviolet (UV) photoconductive detector based on MgO/a-GaN heterostructure was fabricated by simple way. The obtained detector displayed excellent UV sensing properties. Results showed that the thin MgO nanostructure layer can effectively decrease the dark current and passivate the surface defects. The facile method will provide a new route to adopt nanostructures for applications in enhancing the performance of GaN-based UV detector.
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Keywords: MgO Nanostructure; Ultraviolet Photoconductive Detector; a-GaN

Document Type: Research Article

Affiliations: 1: Liaoning Key Laboratory of Optoelectronic Films and Materials, School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, PR China 2: Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, PR China

Publication date: April 1, 2020

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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