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Gallium Oxide Nanowire with Twinning Structure and Its Photoluminescence Property

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In this paper, β-Ga2O3 nanowires were synthesized by vapor transport method at different temperatures. The as-prepared samples were analyzed for crystal structure by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), and for morphology using scanning electron microscopy (SEM). The results show that the Ga2O3 nanowires present a monoclinic structure, the length and diameter of the Ga2O3 nanowires increased with the growth temperature. A majority of the Ga2O3 nanowires present longitudinal twinning structures. A broad photoluminescence emission band was observed from the Ga2O3 nanowires at room temperature, which is caused by different kinds of vacancy defects. Our study shows an unusual twinning structure of β-Ga2O3 nanowires, which may be helpful to understand the growth mechanism of nanowires.
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Keywords: Defect Luminescence; Longitudinal Twinning; Nanowires; β-Ga2O3

Document Type: Research Article

Affiliations: 1: Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212003, China 2: School of Physics and Telecommunications Engineering, Zhoukou Normal University, Zhoukou 466001, China

Publication date: April 1, 2020

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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