Low-dielectric-constant SiCOH films were deposited by plasma-enhanced chemical vapor deposition using 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS) as a single precursor, and the characteristics were investigated. The relative dielectric constant (k)
of the SiCOH films declined gradually from 3.57 to 1.90 with decreasing plasma power. The film with the lowest k, deposited at the lowest power of 10 W, showed the lowest leakage current density, with adequate mechanical strength (hardness: 0.98 GPa and elastic modulus: 8.56 GPa) for
application in multilevel semiconductor interconnects. The chemistry of the OMBTSTS films was characterized by Fourier transform infrared spectroscopy to study the relation between the chemical and dielectric properties. The dielectric properties, such as the k value and leakage current
density, could be explained by a quantitative relation between the Si–O stretching bond and hydrocarbon-related bonds, such as CH3 and Si–CH3 bonds, with lower polarizability in the SiCOH film. The refractive index, which is directly linked to the density
of the film, was also investigated by ellipsometry. We consider OMBTSTS a promising candidate as a single precursor for fabricating low-k SiCOH films in the plasma-enhanced chemical vapor deposition system.
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Low Dielectric Constant Film;
Plasma Enhanced Chemical Vapor Deposition;
Document Type: Research Article
Research and Development TEAM, Applied Materials Korea, Icheon 17379, Republic of Korea
Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
CVD/SPT Team, LG Display, Paju 10845, Republic of Korea
Research and Development MI TEAM, SK Hynix, Icheon 17336, Republic of Korea
Publication date: April 1, 2020
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