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Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect Transistor

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In this work, the work function variation (WFV) and global variability (GV) sources on 5 nm node gate-all-around (GAA) silicon vertical field-effect transistor (VFET) devices are studied through technology computer-aided design (TCAD) simulations and spice simulation based on BSIM-CMG model. Compared to conventional lateral FET devices, VFETs can increase the gate area effectively while minimizing the loss of layout area due to their structural characteristics. Considering VFET devices below 5 nm node, an expansion of the gate area of the device reduces the influence of WFV. However, the effect of GV is exacerbated by weakening gate controllability. In order to analyze the exact variability issues, it is necessary to consider not only the influence by the WFV but also the influence by the GV. Therefore, we propose accurate guideline by analyzing the integrated variability issues in a various VFET device structures in a single device and a 6-T SRAM bit cells.
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Keywords: Gate-All-Around (GAA); Global Variability Sources (GV); Local Variability Sources (LV); Process Variation; Vertical FET (VFET); Work Function Variation (WFV)

Document Type: Research Article

Affiliations: 1: Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea 2: Department of Electronics Engineering, Korea National University of Transportation, Chungju-City 151-742, Korea 3: Department of Electronics Engineering, Konkuk University, Seoul 05029, Korea

Publication date: October 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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