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Home / Journal of Nanoscience and Nanotechnology, Volume 19, Number 10

Capacitance–Voltage Characteristics Analysis of Indium Zinc Oxide Thin Film Transistors Based Ultraviolet Light Irradiation

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The mechanism of solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) made by simultaneous spin coating and ultraviolet (UV) light irradiation was investigated by capacitance–voltage (C–V) measurement. The application of UV light on the IZO TFTs was found to improve the thin film surface structure, and pledge to receive low degree of roughness. Meanwhile, electrical characteristics indicated that the TFT prepared at the UV light irradiation with 90 s exhibits the best performance with field-effect mobility 5.6 cm2/Vs, threshold voltage ═ −0.13 V, subthreshold gate swing 0.64 V/decade and on/off ratio ═ 1.7 × 106. In the C–V contrastive analysis with different UV light irradiation time by 60 s and 90 s, the frequency was varied from 100 Hz to 10 kHz to investigate low as well as high frequency C–V.

Keywords: C–V Measurement; IZO Thin-Film Transistors; UV Light Irradiation

Document Type: Research Article

Affiliations: College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Korea

Publication date: 01 October 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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