Tunnel Field Effect Transistor with Ferroelectric Gate Insulator
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator
of TFET, enhanced on-current (I
on) is obtained. It is attributed to the polarization characteristic of the ferroelectric materials which brings the capacitance boosting effect. Through the TCAD simulation, the characteristics of the ferroelectric material for the optimal
performance conditions are also studied.
Keywords: Capacitance Boosting; Ferroelectric; Low Power Devices; TFET
Document Type: Research Article
Affiliations: 1: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea 2: Department of Electrical and Computer Engineering, Ajou University, Suwon 16449, Republic of Korea
Publication date: 01 October 2019
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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