Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In2O3 film exhibits a nanocrystalline morphology with
grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the “trapping and release”
behavior of electrons at grain boundaries. On the other hand, a decrease in the fieldeffect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In2O3
TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In2O3 semiconductor and the electrostatic interactions between electrons and polar water molecules.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
School of Electronics, Kyungpook National University, Daegu 41566, Korea
Department of Rehabilitation Medicine, Hallym University, College of Medicine, Seoul 07247, Korea
Publication date: April 1, 2019
More about this publication?
Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites