Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters
In this paper, we analyzed the electrical characteristics of 3.3 kV super junction FS IGBT as next generation power device by structural design. The device parameters were extracted by design and process simulation. Especially, to obtain optimal breakdown voltage, we researched the
breakdown characteristic. To begin with, we confirmed that the breakdown voltage was decreased as trench depth was increased. And we analyzed the breakdown voltage according to p-pillar dose. As a result of experiment, we confirmed that the breakdown voltage was increased as p-pillar
dose was increased. To obtain over 3.3 kV, the dose of p-pillar was 5×1013 cm−2, the resistivity of epi layer was 140 Ω·cm. We will extract design and process parameters considering on state voltage drop.
Keywords: 3.3 kV; Breakdown Voltage; FS IGBT; High Voltage; Pillar; Power Semiconductor; Super Junction
Document Type: Research Article
Affiliations: Department of Photovoltaic Engineering, Far East University, Chungbuk 369-700, Korea
Publication date: 01 March 2019
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