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Low-Operating-Voltage Resistive Memory Based on Bi1+δ Fe0.95Zn0.05)O3 Films

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A resistive memory device based on the Ag/Bi1+δ (Fe0.95Zn0.05)O3/SRO/Pt/TiO2/SiO2/Si(100) structure was prepared using radio frequency magnetron sputtering. The composition of the thin film element was analyzed by X-ray photoelectron spectroscopy and the thickness of the thin film was characterized by scanning electron microscope. Through the electrical test, we found that the device exhibited low operating voltage, which included V SET of about 0.1 V, V RESET of about −0.1 V, and V F of about 0.25 V. This facilitated the perfect integration of the device with the circuit design. Testing for 10,000 s at a substrate temperature of 85 °C, the device showed excellent retention. The I–V fitting curves of the resistive devices were analyzed. The low resistance state was in line with the ohmic mechanism and the high resistance state was in accordance with the Space Charge Limited Current mechanism. The resistance change of the device was attributed to the formation of Ag conductive filaments.
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Keywords: BiFeO3; Low Operating Voltage; Resistive Random-Access Memory; Sputtering; Thin Film; Zn-Doped

Document Type: Research Article

Affiliations: 1: School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China 2: Department of Materials Science, Sichuan University, Chengdu 610064, China 3: Singapore Institute of Manufacturing Technology, Agency for Science, Technology and Research (A*STAR), 71 Nanyang Drive 638075, Singapore

Publication date: January 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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