We present an insulator-semiconductor-metal plasmonic hot-electron photodetector based on a grating structure that uses monolayer MoS2 as a semiconductor. Within the MoS2 bandgap wavelength, the choice of design can be used to increase the photocurrent via the
enhanced electric field of surface plasmons. Beyond the bandgap, hot electrons generated by surface plasmons can contribute to the photocurrent, which overcomes the limitation of the semiconductor’s bandgap. Using a finite element method simulation, we determined the optimal geometric
configuration for the grating and metal parameters. Moreover, we compared our conformal structure with typical planar and metal gratings. The results show that our structure enables the maximum optical enhancement for the semiconductor and the highest utilization ratio of hot electrons among
these three architectures. In contrast with a conventional metal-semiconductor-metal structure in which the net current is the difference between forward and backward currents, the proposed structure has only one layer of metal with unidirectional current, which can further enhance the net
current and hence the responsivity.
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Document Type: Research Article
Physics Department, Harbin Institute of Technology, Harbin 150000, China
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
January 1, 2019
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