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Multilevel Resistive Switching in P–N Heterostructure Memory

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High storage density is an important requirement for resistive random access memory (RRAM) devices. Multilevel resistive switching (RS) in RRAMs does not require much change to current technologies compared with device size reduction and 3D integration. Herein, five stable resistance states can be obtained in a Pt/p-NiO/n +-Si memory device by controlling the current compliance (CC). The RS mechanism can be attributed to the formation and rupture of localized conducting filaments (CFs) in an NiO film. The conductivity of the low resistance states (LRS) is determined through the combined action of the P–N junction and localized CFs. The CC can be used to effectively modulate the formation of localized CFs and junction resistance. Importantly, different LRS have large differences in resistance values, resulting in multilevel memory. A model is suggested and discussed to account for the observed multilevel memory operation.
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Keywords: High Density Storage; Multilevel Resistive Switching; Resistive Random Access Memory (RRAM)

Document Type: Research Article

Affiliations: 1: State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China 2: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

Publication date: January 1, 2019

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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