The present work demonstrates a simple and cost effective way to fabricate ZnO memristive device for a neuromorphic application using the single-step hydrothermal method. The structural, morphological, and electrical characterizations were carried out using X-ray diffraction, scanning
electron microscopy, and programmable electrochemical workstation respectively. The effect of active layer thickness on the analog memory, synaptic weights, and resistive switching voltages of Al/ZnO/SS memristive devices were investigated. It is observed that ZnO memristive device possess
thickness dependent synaptic property. The asymmetric resistive switching voltages are observed for all devices and magnitude of V
SET is dependent on the active layer thickness. The mixed blend of Ohmic and trap-controlled space charge limited conduction mechanisms are observed
in developed devices. The notable ‘memristor type-II’ like characteristics and coexistence of memristance and meminductance memory effects are observed in some devices, which shows poor performance for the neuromorphic application. The forgetting curve of the ZnO memristive device
is in good agreement with the human forgetting curve and show rapid decay in initial stage followed by long and slow decay. The results indicate that the hydrothermally grown ZnO memristive device is a potential candidate for future neuromorphic devices.
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Document Type: Research Article
Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
Department of Physics, Shivaji University, Kolhapur 416004, India
Department of Chemistry, Shivaji University, Kolhapur 416004, India
Department of Electronics, Shivaji University, Kolhapur 416004, India
Publication date: 01 November 2018
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