Growth and Electron Mobility of Inverted InAs/GaSb Quantum Well
We report on the growth and the electron mobility investigation of an inverted InAs/GaSb quantum well (QW) structure. The X-ray diffraction measurements indicate that the structure is of very high quality. The full width at half maximum of the −1st XRD satellite peak is 23 arcsec
and the strain is 3.0×10−4. It is found that the electron mobility of the inverted QW is smaller than a non-inverted structure for a wide temperature range in spite of the thicker well width of the inverted QW. This disagrees with the established understanding that the
QW structure with thicker well width has larger electron mobility due to the smaller interface scattering. The smaller mobility is caused by larger electron effective mass since the bottom of the conduction band of the inverted QW becomes a hole-like band due to the mixing between the conduction
band and the valence band.
Keywords: Electron Mobility; Growth; Inverted InAs/GaSb Quantum Well
Document Type: Research Article
Affiliations: 1: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China 2: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
Publication date: 01 November 2018
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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