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Influence of Antireflection Coating on the Performance of Broadly Tunable Quantum Dot External Cavity Laser

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The influence of effective facet reflectivity of gain devices on the performance of broadly tunable quantum dot external cavity lasers has been investigated in detail. Firstly, the properties of the gain devices without coating, with λ/4 SiO2 antireflection coating and with λ/4 ZrO2 antireflection coating were studied. It is found that the reduction in facet reflectivity has three expected effects on the performance of the gain device, including a difference in the light output power between the two facets, an enhancement of threshold current, and a blueshift of the lasing peak. Grating-coupled external cavity lasers with the three gain devices were then fabricated and their properties were systematically studied. With decreasing facet reflectivity, the tunable range extends to the short wavelength significantly with a little sacrifice of long wavelengths due to the limited gain of quantum dots’ grounded state. As a result, the external cavity laser with ZrO2-coated gain device exhibits a 149.6 nm-tuning bandwidth. Besides, the output power of external cavity laser is enhanced after the antireflection coating processing due to the allowed raised injection level induced by the elevated threshold current of the free-running gain device. Especially for the external cavity laser with the ZrO2-coated gain device, the maximum output power of a single wavelength reaches up to 223 mW. For the external cavity laser with SiO2-coated gain device whose minimum reflectivity wavelength is designed at the first excited state, a nearly-flat top profile of output power versus wavelength is realized.

Keywords: Antireflection Coating; Broadband Tuning; External Cavity Laser; Quantum Dot

Document Type: Research Article

Affiliations: 1: Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China 2: Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Publication date: 01 November 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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