The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition
Al
x
Ga1−x
N/GaN heterostructures with different Al content ranging from 0.14 to 0.49 have been grown on sapphire substrates by metalorganic chemical vapor deposition. The Al composition and residual stress of AlGaN were investigated by high resolution
X-ray diffraction. Based on the corrected band gap of AlGaN calculated by photoluminescence measurements and residual stress, the direct bandgap bowing parameter was estimated to be 0.5. Besides, the Al incorporation of AlGaN was found to depend not only on the parasitic reaction between Trimethylaluminium
and NH3 but also on the Ga desorption. The Al/Ga molar fraction ratio in gas phase increased faster than the Al/Ga content ratio in solid phase due to the alleviative Ga desorption.
Keywords: Al Content; Al Incorporation; AlGaN; Residual Stress
Document Type: Research Article
Affiliations: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
Publication date: 01 November 2018
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content