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Home / Journal of Nanoscience and Nanotechnology, Volume 18, Number 11

Growth of InAsSb Quantum Dashes on InP (001) Substrate and Their Photoluminescence Properties

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Authors: Wang, D. B 1 ; Zhuo, N 2 ; Luo, S 2 ; Zhang, J. C 1 ; Zhai, S. Q 2 ; Wang, L. J 2 ; Liu, F. Q 2 ; Liu, J. Q 2 ; Liu, S. M 2 ; Wang, Z. G 2 ; 

Source: Journal of Nanoscience and Nanotechnology, Volume 18, Number 11, November 2018, pp. 7387-7393(7)

Publisher: American Scientific Publishers

DOI: https://doi.org/10.1166/jnn.2018.16068

The authors have studied the growth of InAsSb quantum dashes on InP (001) substrate in a low-pressure metal organic vapor phase epitaxy systematically. Effects of the growth conditions, such as substrate temperature, antimony composition, deposition thickness and matrix have been investigated carefully to obtain high quality InAsSb quantum dashes and a comprehensive explanation of growth mechanism has been given. Surface morphology has been characterized by atomic force microscopy revealing that the antimony surfactant effect is a key factor in controlling the shape of those structures. Moreover the various composition and nominal thickness have complicated effects on the photoluminescence emission wavelength and we have demonstrated that the wavelength of InAsSb quantum dashes ranges from 1.48 μm to 2.03 μm. Based on these results, it is concluded that the incorporation of antimony is a competitive technique to extend the emission wavelength compared with InAs/InP material system, which proves to be a promising way to fabricate mid-infrared emitters.

Keywords: InAsSb; MOVPE; Mid-Infrared; Quantum Dashes

Document Type: Research Article

Affiliations: 1: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China 2: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China

Publication date: 01 November 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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