Electric Potentials of Vertical Flash Memory with a Macaroni Structure
This paper presents the analytical electric potentials of vertical flash memory with a macaroni structure derived by solving a one-dimensional Pöisson equation for vertical flash memory. The solution provides the cross-sectional electric potentials between the surface and the inner
oxide layer of the polysilicon channel in flash memory. The band bending and the charge density were obtained on the basis of the electric potential of the device, which is an important factor in flash memory operation. Additional parameters for the electric potentials in flash memory with
a macaroni structure are described.
Keywords: Electric Potential; Macaroni MOSFET; Vertical Flash Memory
Document Type: Research Article
Affiliations: Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
Publication date: 01 September 2018
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