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Home / Journal of Nanoscience and Nanotechnology, Volume 18, Number 9

Work-Function Engineering of Source-Overlapped Dual-Gate Tunnel Field-Effect Transistor

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Authors: Lee, Ju Chan; Ahn, Tae Jun; Yu, Yun Seop

Source: Journal of Nanoscience and Nanotechnology, Volume 18, Number 9, September 2018, pp. 5925-5931(7)

Publisher: American Scientific Publishers

DOI: https://doi.org/10.1166/jnn.2018.15574

A source-overlapped dual-material gate TFET (SODM-TFET), which features different materials in its source-overlapped and channel gates, is proposed here, and its performance is investigated for various channel and source gate work functions (ψ mc and ψ ms, respectively). Previous studies reported a hump effect in source-overlapped TFETs (SO-TFETs) and relatively high currents in the ambipolar state. The flat-band voltage in our SODM-TFET was controlled by modulating ψ ms and ψ mc, allowing to reduce the hump effect and suppressing the ambipolar current. Compared with conventional SO-TFETs, minimal subthreshold-swing (SS min) and average SS (SS avg) of our SODM-TFET were ~4 and ~3.5 times lower, respectively. The on/off current ratio (I on/I off) of the SODM-TFET increased by ~100, while the on-current (I on) of the SODM-TFET increased by ~100 at the supply voltage of 0.7 V.

Keywords: Dual Material Gate; Source Overlapped TFET (SO-TFET); Subthreshold Swing; Tunnel Field-Effect Transistor (TFET); Work-Function Engineering

Document Type: Research Article

Affiliations: Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University, Anseong 17579, Korea

Publication date: 01 September 2018

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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