Investigation of Cu/In Thermosonic Bonding
In response to the current trend of multi-functional electronic products, integrated circuits become smaller with higher I/O counts. Thermosonic bonding is a potential microelectronic stacking technology for three-dimensional (3D) integration and advanced packaging. Therefore, it is
important to comprehend the relation between strength and bonding condition. In this paper, parameters of ultrasonic vibration for low temperature Cu pillar to Cu/In bonding are investigated through shear test. Moreover, electrical performance is evaluated by Kelvin structure and Daisy chain.
Experiment results show that heating temperature and bonding force possess a positive correlation with shear strength, which can be up to 39 MPa. In addition, it exhibits good electrical performance in the range of 10−8 Ω-cm2 as well as high resistance to environmental
degradation. This work provides guidelines of Cu/In thermosonic bonding for future fine pitch applications.
Keywords: Shear Strength; Thermonsic Bonding; Three Dimensional Integration
Document Type: Research Article
Affiliations: 1: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan 2: ASE Group, Chungli 320, Taiwan
Publication date: 01 December 2017
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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